2N6687

2N6687

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See Product Specifications

2N6687
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N6687 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N6687
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Current - Collector (Ic) (Max):33a395e98b397699d016c1ff66f08018
Voltage - Collector Emitter Breakdown (Max):9f9949aaed108db413b5e1e2e0fb7d73
Vce Saturation (Max) @ Ib, Ic:2165ff44aa5a94bcee85536d3349390d
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:00d88c50c5712ad6c0f3bc67597df162
Power - Max:7b2d4bf616509806611d6dafe030ae20
Frequency - Transition:d8d6f70c880a02e8d1fd037b6758c4b2
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:acacc2b55ee43fad1b569abde9a9b21c
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
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