APTM100A13DG

APTM100A13DG

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APTM100A13DG
Описание:
MOSFET 2N-CH 1000V 65A SP6
Упаковка:
Bulk
Datasheet:
APTM100A13DG Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:APTM100A13DG
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:da0a923d973fa5e86098d39decb3060d
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):3588a73621ee3f04da99a1cfab0ca40a
Current - Continuous Drain (Id) @ 25°C:e0f888687836d50845632884a336d448
Rds On (Max) @ Id, Vgs:a693513496f8cb56f630f092c23e2097
Vgs(th) (Max) @ Id:0e79ddd0b3dfa020c65c49b6dddb8ca3
Gate Charge (Qg) (Max) @ Vgs:0712fabf5e09b7bb7c5be80a2e6fa50c
Input Capacitance (Ciss) (Max) @ Vds:59ee7f8d30727e0d2b041d2bf225237d
Power - Max:0e8a1c4322e7c25fb9326abeda05f0d0
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:26d981b7f81f5c91a5b58d500edb9914
Supplier Device Package:26d981b7f81f5c91a5b58d500edb9914
In Stock: 0
Stock:
0 Can Ship Immediately
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