JAN1N5417US

JAN1N5417US

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JAN1N5417US
Описание:
DIODE GEN PURP 200V 3A B-MELF
Упаковка:
Bulk
Datasheet:
JAN1N5417US Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:JAN1N5417US
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:d7154d910e8314773baed0233d09bca3
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):6683e8853aa8e3d8e5c53126bfd7d30e
Current - Reverse Leakage @ Vr:397d2ded6534117a94277cec917a1d97
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8b2d85415b0289c058adbac4154b6e24
Supplier Device Package:f8f8df5be22b62f7eafdfb4f12af7a64
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
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