JAN2N2907AP

JAN2N2907AP

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JAN2N2907AP
Описание:
SMALL-SIGNAL BJT
Упаковка:
Bulk
Datasheet:
JAN2N2907AP Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:JAN2N2907AP
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):c3f1a9023ba907caf775afe2bcdbfc21
Voltage - Collector Emitter Breakdown (Max):5568a11e95c42251b4839598cb5b4518
Vce Saturation (Max) @ Ib, Ic:c5aee0a7487f716098405b81893a6a9d
Current - Collector Cutoff (Max):82acb4bb2d354f54372985d2685cece2
DC Current Gain (hFE) (Min) @ Ic, Vce:b37edc4b9a922228fdf18284680a225a
Power - Max:518423de9d41db9800c9bf822055b790
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:8c3586d1cd2b59ea921759540121ba93
Supplier Device Package:140add82a3afcc85ead52a5489b8e275
In Stock: 0
Stock:
0 Can Ship Immediately
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