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See Product Specifications
| номер части: | SG2013J |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | Microchip Technology |
| Упаковка: | Tray |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d541a26a6e1ab7b92f184e5720c2c887 |
| Current - Collector (Ic) (Max): | a7ba2723f2ce3fb8673c85e5481e65d7 |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Vce Saturation (Max) @ Ib, Ic: | 4f87be7412182ee6037b7a08b83d2f58 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | e28a11fee169250652c8945077ab0736 |
| Power - Max: | 336d5ebc5436534e61d16e63ddfca327 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 6113e5feb3ae4604db55235011ca6e99 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 2e917659be4ccf9829c5a99282d48863 |
| Supplier Device Package: | fd01a4e67d3b1c0596069b7427d37c3a |
