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See Product Specifications
| номер части: | TN0610N3-G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Microchip Technology |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 79f90a923dae0c99d4a5ce2c4dc06d13 |
| Drive Voltage (Max Rds On, Min Rds On): | bf428058044d9603d648812c4188d4b4 |
| Rds On (Max) @ Id, Vgs: | 1ca55f08b0d8a35be7f7c8a5120e06c6 |
| Vgs(th) (Max) @ Id: | 25509f2d81b84ad0de9368a2b900ad19 |
| Gate Charge (Qg) (Max) @ Vgs: | 336d5ebc5436534e61d16e63ddfca327 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | ad2f758c688e7a8bfc821d58cdd91bd2 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ebde75a9fa12085608f4e5bd5fc1a855 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
