M29W160EB7AN6E

M29W160EB7AN6E

Images are for reference only
See Product Specifications

M29W160EB7AN6E
Описание:
IC FLASH 16MBIT PARALLEL 48TSOP
Упаковка:
Tray
Datasheet:
M29W160EB7AN6E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:M29W160EB7AN6E
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:f07b01453909b2de920445603c484ba7
Memory Size:6c2c67d31ba85e2383a371ef7697c087
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:336d5ebc5436534e61d16e63ddfca327
Write Cycle Time - Word, Page:7fba83063a2457479b265c3ae2fcda73
Access Time:085935479c57c52499370412c48e3d38
Voltage - Supply:2cd0a4018674d195c97a414ad2f03249
Operating Temperature:a0642ad5458e4dac9a3b9b1a9a5604fd
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:ec725816fabe8c52cae9822b37666641
Supplier Device Package:292d85d02459603aca6aa905fd1d0d96
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MX25R1635FZUIH0
MX25R1635FZUIH0
Macronix
IC FLASH 16MBIT SPI/QUAD 8USON
UPD48576236F1-E18-DW1-A
UPD48576236F1-E18-DW1-A
Renesas
UPD48576236F1 - LOW LATENCY HIGH
GS8256418GB-400I
GS8256418GB-400I
GSI Technology Inc.
IC SRAM 288MBIT PAR 119FPBGA
SST39VF1602C-70-4C-B3KE
SST39VF1602C-70-4C-B3KE
Microchip Technology
IC FLASH 16MBIT PARALLEL 48TFBGA
M58LR256KT70ZC5F TR
M58LR256KT70ZC5F TR
Micron Technology Inc.
IC FLASH 256MBIT PAR 79VFBGA
IS25LD040-JNLE-TR
IS25LD040-JNLE-TR
ISSI, Integrated Silicon Solution Inc
IC FLASH 4MBIT SPI 100MHZ 8SOIC
IS42VM16800G-6BLI
IS42VM16800G-6BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 128MBIT PARALLEL 54TFBGA
CY7C25422KV18-333BZXC
CY7C25422KV18-333BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1347G-200AXCT
CY7C1347G-200AXCT
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 100TQFP
FM1608B-SG
FM1608B-SG
Infineon Technologies
IC FRAM 64KBIT PARALLEL 28SOIC
CY7C168A-20PC
CY7C168A-20PC
Rochester Electronics, LLC
STANDARD SRAM, 4KX4, 20NS, CMOS
CY7C1387BV25-150AC
CY7C1387BV25-150AC
Rochester Electronics, LLC
CACHE SRAM, 1MX18, 3.8NS
Вас также может заинтересовать
MT29F512G08EBHAFJ4-3ITFES:A
MT29F512G08EBHAFJ4-3ITFES:A
Micron Technology Inc.
IC FLASH 512GBIT PAR 132VBGA
MT29F512G08CEHBBJ4-3R:B
MT29F512G08CEHBBJ4-3R:B
Micron Technology Inc.
IC FLASH 512GBIT PAR 132VBGA
PF48F4000P0ZTQE3
PF48F4000P0ZTQE3
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 88SCSP
MT46H16M32LFCG-6 IT:B
MT46H16M32LFCG-6 IT:B
Micron Technology Inc.
IC DRAM 512MBIT PAR 152VFBGA
MTFC16GLXAM-WT
MTFC16GLXAM-WT
Micron Technology Inc.
IC FLASH 128GBIT MMC 153VFBGA
M25P40-VMN6TPBA TR
M25P40-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
MT53D384M32D2DS-053 WT:E
MT53D384M32D2DS-053 WT:E
Micron Technology Inc.
IC SDRAM LPDDR4 12GBIT 384MX32 F
MTFC64GAKAEYF-4M IT TR
MTFC64GAKAEYF-4M IT TR
Micron Technology Inc.
IC FLASH 512GBIT MMC 153LFBGA
MT29F256G08CMCGBJ4-37R:G
MT29F256G08CMCGBJ4-37R:G
Micron Technology Inc.
IC FLASH 256GBIT PAR 132VBGA
MTA18ASF4G72PDZ-3G2B2
MTA18ASF4G72PDZ-3G2B2
Micron Technology Inc.
MODULE DDR4 SDRAM 32GB 288RDIMM
MT18HTF6472AY-53EB2
MT18HTF6472AY-53EB2
Micron Technology Inc.
MODULE DDR2 SDRAM 512MB 240UDIMM
MT4HTF6464AY-53EA1
MT4HTF6464AY-53EA1
Micron Technology Inc.
MODULE DDR2 SDRAM 512MB 240UDIMM