MT29E256G08CECBBH6-6:B TR

MT29E256G08CECBBH6-6:B TR

Images are for reference only
See Product Specifications

MT29E256G08CECBBH6-6:B TR
Описание:
IC FLASH 256GBIT PAR 152VBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
MT29E256G08CECBBH6-6:B TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT29E256G08CECBBH6-6:B TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:252927c9338409602b9cac9bab19944a
Memory Size:d45f0e95209599c4f347b0a3cc02ac37
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:ef12fbfd8df3576ae3c40aac4401227e
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:2cd0a4018674d195c97a414ad2f03249
Operating Temperature:0cdaf46cf173097c627a2ad0ebcd5015
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:f8e59d3b3b9ab548a1679112767602ea
Supplier Device Package:22e041f42fe3e1efe25edce5e8ad3aaf
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MT46H16M32LFB5-6 AIT:C TR
MT46H16M32LFB5-6 AIT:C TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 90VFBGA
FM93C46LZMT8X
FM93C46LZMT8X
Fairchild Semiconductor
EEPROM, 64X16, SERIAL, CMOS
LE25LB1282TT-TLM-E
LE25LB1282TT-TLM-E
Sanyo
128KBIT SERIAL SPI EEPROM
PF38F1020W0YBQ0
PF38F1020W0YBQ0
Intel
MEMORY CIRCUIT, 2MX16 PBGA88
IS61C3216AL-12TLI
IS61C3216AL-12TLI
ISSI, Integrated Silicon Solution Inc
IC SRAM 512KBIT PAR 44TSOP II
IS42VM32800K-6BLI
IS42VM32800K-6BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PARALLEL 90TFBGA
MT46V32M8BG-6:GTR
MT46V32M8BG-6:GTR
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 60FBGA
M25PE40-VMP6G
M25PE40-VMP6G
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8VDFPN
AS4C256M8D3L-12BINTR
AS4C256M8D3L-12BINTR
Alliance Memory, Inc.
IC DRAM 2GBIT PARALLEL 78FBGA
W25Q128FVAIG TR
W25Q128FVAIG TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8DIP
MT29F4G08ABAFAH4-AITES:F
MT29F4G08ABAFAH4-AITES:F
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 63VFBGA
S29GL512N11FFA020
S29GL512N11FFA020
Infineon Technologies
IC FLASH MEMORY NOR PARALLEL
Вас также может заинтересовать
MT54V512H18EF-6
MT54V512H18EF-6
Micron Technology Inc.
QDR SRAM, 512KX18, 2.5NS PBGA165
MT25QL512ABB8E12-0AUT TR
MT25QL512ABB8E12-0AUT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 24TPBGA
MT46V128M4BN-5B:F
MT46V128M4BN-5B:F
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
M29DW256G70NF6E
M29DW256G70NF6E
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 56TSOP
M58LR256KB70ZQ5E
M58LR256KB70ZQ5E
Micron Technology Inc.
IC FLASH 256MBIT PAR 88TFBGA
MT29F512G08CMECBH7-12:C
MT29F512G08CMECBH7-12:C
Micron Technology Inc.
IC FLASH 512GBIT PAR 152TBGA
MT42L384M32D3LP-18 WT:A
MT42L384M32D3LP-18 WT:A
Micron Technology Inc.
IC DRAM 12GBIT PARALLEL 533MHZ
MT40A512M16JY-075E:B TR
MT40A512M16JY-075E:B TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
MT53D384M32D2DS-053 AIT:C
MT53D384M32D2DS-053 AIT:C
Micron Technology Inc.
IC DRAM 12GBIT 1866MHZ 200WFBGA
MT53D1G64D4NW-046 WT:A
MT53D1G64D4NW-046 WT:A
Micron Technology Inc.
DRAM LPDDR4 64G 1GX64 FBGA QDP
MT8VDDT3264HY-335G3
MT8VDDT3264HY-335G3
Micron Technology Inc.
MODULE DDR SDRAM 256MB 200SODIMM
MT16HTF25664AZ-800M1
MT16HTF25664AZ-800M1
Micron Technology Inc.
MODULE DDR2 SDRAM 2GB 240UDIMM