MT29F256G08CKCDBJ5-6R:D

MT29F256G08CKCDBJ5-6R:D

Images are for reference only
See Product Specifications

MT29F256G08CKCDBJ5-6R:D
Описание:
IC FLASH 256GBIT PAR 132TBGA
Упаковка:
Tray
Datasheet:
MT29F256G08CKCDBJ5-6R:D Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT29F256G08CKCDBJ5-6R:D
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:791ff46ae2f1359bb6f3026041774c7c
Memory Size:d45f0e95209599c4f347b0a3cc02ac37
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:ef12fbfd8df3576ae3c40aac4401227e
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:2cd0a4018674d195c97a414ad2f03249
Operating Temperature:0cdaf46cf173097c627a2ad0ebcd5015
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:c9447e6db68ac64d2bb4e9db7070ace3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MT41K256M16TW-107:P
MT41K256M16TW-107:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
25AA080CT-I/MS
25AA080CT-I/MS
Microchip Technology
IC EEPROM 8KBIT SPI 10MHZ 8MSOP
GD25Q80CSIG
GD25Q80CSIG
GigaDevice Semiconductor (HK) Limited
IC FLASH 8MBIT SPI/QUAD I/O 8SOP
IS42VM16160K-6BLI
IS42VM16160K-6BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PARALLEL 54TFBGA
AT24C04N-10SC-2.7
AT24C04N-10SC-2.7
Microchip Technology
IC EEPROM 4KBIT I2C 400KHZ 8SOIC
IS61NVF51236-7.5TQI-TR
IS61NVF51236-7.5TQI-TR
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 100TQFP
AT27C020-55TU
AT27C020-55TU
Microchip Technology
IC EPROM 2MBIT PARALLEL 32TSOP
7025L25PF
7025L25PF
Renesas Electronics America Inc
IC SRAM 128KBIT PARALLEL 100TQFP
MT25QU128ABA1EW7-MSIT TR
MT25QU128ABA1EW7-MSIT TR
Micron Technology Inc.
IC FLASH 128MBIT SPI 8WPDFN
MT53D512M64D4NY-046 XT ES:E TR
MT53D512M64D4NY-046 XT ES:E TR
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ FBGA
IS43LD32128C-18BPLI
IS43LD32128C-18BPLI
ISSI, Integrated Silicon Solution Inc
IC DRAM
CY7C1021CV33-8VC
CY7C1021CV33-8VC
Rochester Electronics, LLC
STANDARD SRAM, 64KX16, 8NS
Вас также может заинтересовать
MT29F4G08ABADAWP-AATX:D TR
MT29F4G08ABADAWP-AATX:D TR
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 48TSOP I
MT48LC8M16A2TG-75:G
MT48LC8M16A2TG-75:G
Micron Technology Inc.
IC DRAM 128MBIT PAR 54TSOP II
MT45W256KW16PEGA-70 WT TR
MT45W256KW16PEGA-70 WT TR
Micron Technology Inc.
IC PSRAM 4MBIT PARALLEL 48VFBGA
MT29FEN64GDKCAAXDQ-10:A
MT29FEN64GDKCAAXDQ-10:A
Micron Technology Inc.
IC MEMORY
MT49H16M36SJ-25:B TR
MT49H16M36SJ-25:B TR
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 144FBGA
MT42L384M32D3LP-25 WT:A
MT42L384M32D3LP-25 WT:A
Micron Technology Inc.
IC DRAM 12GBIT PARALLEL 400MHZ
EMB8132B4PM-DV-F-D
EMB8132B4PM-DV-F-D
Micron Technology Inc.
IC SDRAM LPDDR2 8GBIT 256MX32 FB
MT29F1G08ABBEAM68M3WC1
MT29F1G08ABBEAM68M3WC1
Micron Technology Inc.
SLC 1G DIE 128MX8
MT47H128M8SH-25E AIT:M TR
MT47H128M8SH-25E AIT:M TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 60FBGA
MT16HTF25664AY-40ED1
MT16HTF25664AY-40ED1
Micron Technology Inc.
MODULE DDR2 SDRAM 2GB 240UDIMM
MT4JTF12864AZ-1G6D1
MT4JTF12864AZ-1G6D1
Micron Technology Inc.
MODULE DDR3 SDRAM 1GB 240UDIMM
MTFDDAK256TDL-1AW15ABFA
MTFDDAK256TDL-1AW15ABFA
Micron Technology Inc.
IC SSD FLASH NAND SLC