Logo Logo
0
Мой запрос предложений
English


MT41J128M16HA-125:D

MT41J128M16HA-125:D

Images are for reference only
See Product Specifications

MT41J128M16HA-125:D
Mfr.:
Описание:
IC DRAM 2GBIT PARALLEL 96FBGA
Упаковка:
Tray
Datasheet:
MT41J128M16HA-125:D Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT41J128M16HA-125:D
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:b3a5a0955d52418db1dce7f5c7a1dace
Memory Size:1a4ccc547477d0866c86bdc831432557
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:be41bdb52fb2468fae0a13bf80ac3f0f
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:e9786bf4fcb9138efcbc03b9abccccec
Voltage - Supply:e6b719e6dd441558d149d427532266d9
Operating Temperature:95ef9db0196c421a5cb13f5a519f4246
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:add77b4046450355978b7d74a79b8ef0
Supplier Device Package:c84c6bcb0fd352de26e6c93bb480f4c0
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MT29F1G08ABAEAWP-AITX:E
MT29F1G08ABAEAWP-AITX:E
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP I
23A512-I/ST
23A512-I/ST
Microchip Technology
IC SRAM 512KBIT SPI/QUAD 8TSSOP
W9812G6KH-6 TR
W9812G6KH-6 TR
Winbond Electronics
IC DRAM 128MBIT PAR 54TSOP II
IS43DR81280B-25DBL
IS43DR81280B-25DBL
ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PARALLEL 60TWBGA
71V3558S133PFG
71V3558S133PFG
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 100TQFP
MT47H128M16RT-25E AIT:C
MT47H128M16RT-25E AIT:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
AT28BV64B-25SI
AT28BV64B-25SI
Microchip Technology
IC EEPROM 64KBIT PARALLEL 28SOIC
MT46V64M8BN-6:D
MT46V64M8BN-6:D
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
IS42S16800D-7T
IS42S16800D-7T
ISSI, Integrated Silicon Solution Inc
IC DRAM 128MBIT PAR 54TSOP II
W25X10AVSNIG
W25X10AVSNIG
Winbond Electronics
IC FLASH 1MBIT SPI 100MHZ 8SOIC
MT29F256G08CMCBBH2-10:B TR
MT29F256G08CMCBBH2-10:B TR
Micron Technology Inc.
IC FLASH 256GBIT PAR 100TBGA
S25FS512SAGNFA013
S25FS512SAGNFA013
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 8WSON
Вас также может заинтересовать
MT40A1G8SA-062E:E TR
MT40A1G8SA-062E:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT47H128M16RT-3:C
MT47H128M16RT-3:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
M29DW127G70NF6E
M29DW127G70NF6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
EDFB164A1MA-JD-F-D
EDFB164A1MA-JD-F-D
Micron Technology Inc.
IC DRAM 32GBIT PARALLEL 933MHZ
MT29E768G08EEHBBJ4-3ES:B TR
MT29E768G08EEHBBJ4-3ES:B TR
Micron Technology Inc.
IC FLASH 768GBIT PAR 132VBGA
MT53B768M32D4NQ-062 AIT:B
MT53B768M32D4NQ-062 AIT:B
Micron Technology Inc.
IC DRAM 24GBIT 1600MHZ 200VFBGA
MT29F2G08ABAEAWP-E:E
MT29F2G08ABAEAWP-E:E
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 48TSOP I
MTFC8GLWDQ-3L AITI Z
MTFC8GLWDQ-3L AITI Z
Micron Technology Inc.
IC FLASH 64GBIT MMC 100LBGA
MT53E384M64D4NK-053 WT:E TR
MT53E384M64D4NK-053 WT:E TR
Micron Technology Inc.
LPDDR4 24G 384MX64 FBGA QDP
MT18KSF25672PZ-1G4G1
MT18KSF25672PZ-1G4G1
Micron Technology Inc.
MODULE DDR3 SDRAM 2GB 240RDIMM
MT4HTF3264HZ-800H1
MT4HTF3264HZ-800H1
Micron Technology Inc.
MODUL DDR2 SDRAM 256MB 200SODIMM
MTA18ASF4G72HZ-3G2F1
MTA18ASF4G72HZ-3G2F1
Micron Technology Inc.
MOD DDR4 SDRAM 32GB 260SODIMM