MT46V64M8BN-6:F

MT46V64M8BN-6:F

Images are for reference only
See Product Specifications

MT46V64M8BN-6:F
Описание:
IC DRAM 512MBIT PARALLEL 60FBGA
Упаковка:
Tray
Datasheet:
MT46V64M8BN-6:F Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT46V64M8BN-6:F
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:84b2766ac9ff2d265c2fd19294bec37f
Memory Size:424923369ff72c92aa01a573d129fdf9
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:ef12fbfd8df3576ae3c40aac4401227e
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:f695234863089c7d5cd8e0b2f30cec3f
Voltage - Supply:f4409411aa9c820a51e591658824b29b
Operating Temperature:0cdaf46cf173097c627a2ad0ebcd5015
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:81039237fc8b5739bbfd3b4fdbedc7e8
Supplier Device Package:6783d166a16aabd0198888ba38751ade
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RMLV0414EGSB-4S2#HA1
RMLV0414EGSB-4S2#HA1
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44TSOP II
IS43R16160F-6TLI
IS43R16160F-6TLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PAR 66TSOP II
IS42VM32100D-75BLI-TR
IS42VM32100D-75BLI-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 32MBIT PARALLEL 90TFBGA
24FC256-I/P
24FC256-I/P
Microchip Technology
IC EEPROM 256KBIT I2C 1MHZ 8DIP
AT49LV040-90JC
AT49LV040-90JC
Microchip Technology
IC FLASH 4MBIT PARALLEL 32PLCC
MT52L256M64D2LZ-107 XT:B
MT52L256M64D2LZ-107 XT:B
Micron Technology Inc.
IC DRAM 16GBIT 933MHZ 216FBGA
CY62157EV30LL-45ZXAT
CY62157EV30LL-45ZXAT
Infineon Technologies
IC SRAM 8MBIT PARALLEL 48TSOP I
CY62157ELL-55BVXE
CY62157ELL-55BVXE
Infineon Technologies
IC SRAM 8MBIT PARALLEL 48VFBGA
CH393-80023
CH393-80023
Infineon Technologies
IC FLASH NOR
611078800A
611078800A
Cypress Semiconductor Corp
IC GATE NOR
EP10-002165
EP10-002165
Infineon Technologies
IC GATE NAND
CY7C11701KV18-450BZXC
CY7C11701KV18-450BZXC
Rochester Electronics, LLC
DDR SRAM, 512KX36, 0.45NS, CMOS,
Вас также может заинтересовать
MT47H64M16NF-25E AAT:M
MT47H64M16NF-25E AAT:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT44K16M36RB-093E:B TR
MT44K16M36RB-093E:B TR
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 168BGA
MT46V128M4TG-75E:D TR
MT46V128M4TG-75E:D TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 66TSOP
MT48LC8M32B2B5-7 IT TR
MT48LC8M32B2B5-7 IT TR
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 90VFBGA
M29F800AB70M1
M29F800AB70M1
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 44SO
M50FLW080AN5G
M50FLW080AN5G
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP
PC28F128G18FE
PC28F128G18FE
Micron Technology Inc.
IC FLASH 128MBIT PAR 64EASYBGA
MT53D512M32D2NP-046 WT:D
MT53D512M32D2NP-046 WT:D
Micron Technology Inc.
IC DRAM 16GBIT 2133MHZ 200WFBGA
MT29F4G16ABADAWP:D
MT29F4G16ABADAWP:D
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 48TSOP I
MT53E1G32D2NP-046 WT:B
MT53E1G32D2NP-046 WT:B
Micron Technology Inc.
IC MEMORY DRAM 32G 1GX32 FBGA
MT9HTF12872PKY-53EA2
MT9HTF12872PKY-53EA2
Micron Technology Inc.
MOD DDR2 SDRAM 1GB 244MINIRDIMM
MTFDGAL350SAH-1N2AB
MTFDGAL350SAH-1N2AB
Micron Technology Inc.
SSD 350GB 2.5" 12V