MT47H128M8B7-5E L:A

MT47H128M8B7-5E L:A

Images are for reference only
See Product Specifications

MT47H128M8B7-5E L:A
Описание:
IC DRAM 1GBIT PARALLEL 92FBGA
Упаковка:
Tray
Datasheet:
MT47H128M8B7-5E L:A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT47H128M8B7-5E L:A
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:166c874e24924400308f15a04a09db9e
Memory Size:06cd55beba5d9f1c32f5a54bb90ff43b
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:df549433840039035da9cefbb3700be4
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:a8e103d72b1a4bf1ef2e3faa6e78462f
Voltage - Supply:f933f021ee78bec672349c20c213e375
Operating Temperature:14af5cdd53cda4648595f2cff8aa0b27
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:9abce2f3406a6c7a9969c0ccea000870
Supplier Device Package:d2ace98528f010e69422580e69fc58e3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IS43LQ32256A-062BLI
IS43LQ32256A-062BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 8GBIT PARALLEL 200TFBGA
HN27C4096AG12
HN27C4096AG12
Renesas Electronics America Inc
UV EPROM, 256KX16, 120NS
W66BQ6NBUAGJ TR
W66BQ6NBUAGJ TR
Winbond Electronics
2GB LPDDR4X, X16, 1866MHZ, -40C~
IS49NLS96400-33BL
IS49NLS96400-33BL
ISSI, Integrated Silicon Solution Inc
IC DRAM 576MBIT PAR 144FCBGA
W25Q256FVBAQ
W25Q256FVBAQ
Winbond Electronics
IC FLASH
7024S20PFG
7024S20PFG
Renesas Electronics America Inc
IC SRAM
S25FL127SABMFV000
S25FL127SABMFV000
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C25422KV18-333BZXC
CY7C25422KV18-333BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CYD36S72V18-167BGXI
CYD36S72V18-167BGXI
Rochester Electronics, LLC
IC SRAM 36MBIT 167MHZ 484FBGA
CY7C1413TV18-250BZC
CY7C1413TV18-250BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
16-4000-01
16-4000-01
Cypress Semiconductor Corp
IC FLASH NOR 128MB 8SOIC
S99JL064J55TFI000
S99JL064J55TFI000
Cypress Semiconductor Corp
IC FLASH MEMORY NOR
Вас также может заинтересовать
MT29F2T08GELBEJ4:B
MT29F2T08GELBEJ4:B
Micron Technology Inc.
QLC 2T 256GX8 VBGA DDP
M28W160ECT70ZB6E
M28W160ECT70ZB6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 46TFBGA
MT47H512M4EB-3:C
MT47H512M4EB-3:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 60FBGA
PC28F00BM29EWHA
PC28F00BM29EWHA
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 64FBGA
MT40A256M16GE-075E IT:B
MT40A256M16GE-075E IT:B
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT53B512M64D4PV-062 WT ES:C
MT53B512M64D4PV-062 WT ES:C
Micron Technology Inc.
IC DRAM 32GBIT 1600MHZ FBGA
MT53D512M64D4SB-046 XT ES:E TR
MT53D512M64D4SB-046 XT ES:E TR
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ FBGA
MT18VDVF12872DY-40BF4
MT18VDVF12872DY-40BF4
Micron Technology Inc.
MODULE DDR SDRAM 1GB 184RDIMM
MT16VDDF12864HG-335F2
MT16VDDF12864HG-335F2
Micron Technology Inc.
MODULE DDR SDRAM 1GB 200SODIMM
MT9VDDT6472PHY-40BF2
MT9VDDT6472PHY-40BF2
Micron Technology Inc.
MODULE DDR SDRAM 512MB 200SODIMM
MT18KSF51272PDZ-1G6M1
MT18KSF51272PDZ-1G6M1
Micron Technology Inc.
MODULE DDR3 SDRAM 4GB 240RDIMM
MT8KTF51264AZ-1G9E1
MT8KTF51264AZ-1G9E1
Micron Technology Inc.
MODULE DDR3L SDRAM 4GB 240UDIMM