Logo Logo
0
Мой запрос предложений
English


MT47H32M16CC-5E:B

MT47H32M16CC-5E:B

Images are for reference only
See Product Specifications

MT47H32M16CC-5E:B
Mfr.:
Описание:
IC DRAM 512MBIT PARALLEL 84FBGA
Упаковка:
Tray
Datasheet:
MT47H32M16CC-5E:B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT47H32M16CC-5E:B
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:166c874e24924400308f15a04a09db9e
Memory Size:b5269209046a63d59378081a82bc20ea
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:df549433840039035da9cefbb3700be4
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:a8e103d72b1a4bf1ef2e3faa6e78462f
Voltage - Supply:f933f021ee78bec672349c20c213e375
Operating Temperature:14af5cdd53cda4648595f2cff8aa0b27
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:0b27812a19d3aad7a71b730a9601e53c
Supplier Device Package:69f4a05ec14789cb2d19f6e145c6f854
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GD25Q32ETIGR
GD25Q32ETIGR
GigaDevice Semiconductor (HK) Limited
32MBIT NOR FLASH /3.3V /SOP8 150
W9864G6JB-6I
W9864G6JB-6I
Winbond Electronics
64MB SDR SDRAM X16, 166MHZ, IND
M10082040108X0PWAR
M10082040108X0PWAR
Renesas Electronics America Inc
IC RAM 8MBIT 108MHZ 8DFN
MT48LC32M8A2TG-75:D TR
MT48LC32M8A2TG-75:D TR
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
MT29F128G08CECGBJ4-5M:G
MT29F128G08CECGBJ4-5M:G
Micron Technology Inc.
IC FLSH 128GBIT PARALLEL 132VBGA
MT25QU256ABA8ESF-MSIT TR
MT25QU256ABA8ESF-MSIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 16SOP2
DS28E10R+U
DS28E10R+U
Analog Devices Inc./Maxim Integrated
IC EPROM 224B 1-WIRE SOT23-3
S29GL512T12TFVV20
S29GL512T12TFVV20
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP
S29GL512T12TFN013
S29GL512T12TFN013
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP
CG6747AT
CG6747AT
Rochester Electronics, LLC
SRAM CG6747AT
S34MS01G200GHI000Z
S34MS01G200GHI000Z
Cypress Semiconductor Corp
1 GB ECC, 1.8V SLC NAND FLASH
28486511 B
28486511 B
Cypress Semiconductor Corp
IC MEMORY FLASH NOR
Вас также может заинтересовать
MT29F8G08ABACAH4-IT:C TR
MT29F8G08ABACAH4-IT:C TR
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 63VFBGA
MT40A8G4VNE-062H:B TR
MT40A8G4VNE-062H:B TR
Micron Technology Inc.
IC FLASH 32GBIT 1.6GHZ
MT47H32M16CC-37E:B
MT47H32M16CC-37E:B
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
RC28F640P33T85A
RC28F640P33T85A
Micron Technology Inc.
IC FLASH 64MBIT PAR 64EASYBGA
MT29F16G08ABACAWP:C
MT29F16G08ABACAWP:C
Micron Technology Inc.
IC FLSH 16GBIT PARALLEL 48TSOP I
MT48LC4M32B2P-6A IT:L TR
MT48LC4M32B2P-6A IT:L TR
Micron Technology Inc.
IC DRAM 128MBIT PAR 86TSOP II
MT41K256M8DA-107:K
MT41K256M8DA-107:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 78FBGA
MT29RZ4C4DZZMGMF-18W.80C TR
MT29RZ4C4DZZMGMF-18W.80C TR
Micron Technology Inc.
IC FLASH RAM 4G PAR 168VFBGA
MT40A256M16GE-075E AIT:B
MT40A256M16GE-075E AIT:B
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT41J128M16JT-093 J:K
MT41J128M16JT-093 J:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 1066MHZ
MT29F128G08CBECBL95B3WC1
MT29F128G08CBECBL95B3WC1
Micron Technology Inc.
IC FLASH 128GBIT PARALLEL DIE
MTFDHBA480TDF-1AW1ZABYY
MTFDHBA480TDF-1AW1ZABYY
Micron Technology Inc.
7300 480GB M.2 SSD