MT47H64M8CB-3:B TR

MT47H64M8CB-3:B TR

Images are for reference only
See Product Specifications

MT47H64M8CB-3:B TR
Описание:
IC DRAM 512MBIT PARALLEL 60FBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
MT47H64M8CB-3:B TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT47H64M8CB-3:B TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:166c874e24924400308f15a04a09db9e
Memory Size:424923369ff72c92aa01a573d129fdf9
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:36e50eec4451ebe762b9d4a8defc4fb4
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:f8503c5107e516304dafaeb968244d92
Voltage - Supply:f933f021ee78bec672349c20c213e375
Operating Temperature:14af5cdd53cda4648595f2cff8aa0b27
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:fac2d984c9d00bf39c1a5141fe511dd2
Supplier Device Package:fac2d984c9d00bf39c1a5141fe511dd2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
M95640-RMN6TP
M95640-RMN6TP
STMicroelectronics
IC EEPROM 64KBIT SPI 20MHZ 8SO
W25M512JWBIQ TR
W25M512JWBIQ TR
Winbond Electronics
SPIFLASH, 1.8V, 512M-BIT, 4KB UN
M10162040108X0ISAR
M10162040108X0ISAR
Renesas Electronics America Inc
IC RAM 16MBIT 108MHZ 8SOIC
DS2433+
DS2433+
Analog Devices Inc./Maxim Integrated
IC EEPROM 4KBIT 1-WIRE TO92-3
MT29PZZZ8D4WKFEW-18 W.6D4 TR
MT29PZZZ8D4WKFEW-18 W.6D4 TR
Micron Technology Inc.
IC FLASH 72G SLC DDR
MT47H256M8EB-3:C TR
MT47H256M8EB-3:C TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 60FBGA
AS4C256M16D3A-12BINTR
AS4C256M16D3A-12BINTR
Alliance Memory, Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
CY62128EV30LL-45SXIT
CY62128EV30LL-45SXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32SOIC
CY62167GN18-55BVXI
CY62167GN18-55BVXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
S29GL064N90FAI022
S29GL064N90FAI022
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA
CY7C1021CV33-15VIT
CY7C1021CV33-15VIT
Rochester Electronics, LLC
STANDARD SRAM, 64KX16, 15NS
CY7C1347G-166BGXCT
CY7C1347G-166BGXCT
Cypress Semiconductor Corp
CACHE SRAM, 128KX36, 3.5NS, CMOS
Вас также может заинтересовать
MT41K128M16JT-125 AIT:K TR
MT41K128M16JT-125 AIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT48LC4M32B2F5-7:G TR
MT48LC4M32B2F5-7:G TR
Micron Technology Inc.
IC DRAM 128MBIT PARALLEL 90VFBGA
MT45W4MW16PFA-85 WT TR
MT45W4MW16PFA-85 WT TR
Micron Technology Inc.
IC PSRAM 64MBIT PARALLEL 48VFBGA
M58WR032KB70ZQ6Z
M58WR032KB70ZQ6Z
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 88VFBGA
MT41K256M4DA-107:J
MT41K256M4DA-107:J
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 78FBGA
MT29F512G08CUCDBJ6-6R:D TR
MT29F512G08CUCDBJ6-6R:D TR
Micron Technology Inc.
IC FLASH 512GBIT PAR 132LBGA
MT53B384M32D2NP-062 WT:B TR
MT53B384M32D2NP-062 WT:B TR
Micron Technology Inc.
IC DRAM 12GBIT 1600MHZ 200WFBGA
N25Q512A81GSF40F TR
N25Q512A81GSF40F TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 108MHZ 16SO
MT38M5041A3034EZZI.XR6
MT38M5041A3034EZZI.XR6
Micron Technology Inc.
IC FLASH RAM 512MBIT PAR 56VFBGA
MT53B512M32D2NP-062 WT ES:C
MT53B512M32D2NP-062 WT ES:C
Micron Technology Inc.
IC DRAM 16GBIT 1600MHZ 200WFBGA
MT4LSDT1664AG-13ED1
MT4LSDT1664AG-13ED1
Micron Technology Inc.
MODULE SDRAM 128MB 168UDIMM
MTFDDAV256TBN-1AR15ABHA
MTFDDAV256TBN-1AR15ABHA
Micron Technology Inc.
SSD 1100 256GB M.2