MT52L256M64D2LZ-107 WT:B TR

MT52L256M64D2LZ-107 WT:B TR

Images are for reference only
See Product Specifications

MT52L256M64D2LZ-107 WT:B TR
Описание:
IC DRAM 16GBIT 933MHZ 216FBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
MT52L256M64D2LZ-107 WT:B TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT52L256M64D2LZ-107 WT:B TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:880b821afa150e06cccf363579299de6
Memory Size:cef447a45481d292d0717e056e1b6089
Memory Interface:336d5ebc5436534e61d16e63ddfca327
Clock Frequency:111de3b2326b9485426380a322d90788
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:b78d2b15e9c4500d8959f9a8031c72dc
Operating Temperature:2fdaa073b39234602c87f06c00f299e2
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:f201159f0f3132ec8fd608be7801ea3a
Supplier Device Package:acba27cd46999d53ea7a219d352a8c7d
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
DS1245Y-70IND+
DS1245Y-70IND+
Analog Devices Inc./Maxim Integrated
IC NVSRAM 1MBIT PARALLEL 32EDIP
R1EX24016ASAS0I#S1
R1EX24016ASAS0I#S1
Renesas Electronics America Inc
EEPROM, 2KX8, SERIAL
93C66CT-I/MNY
93C66CT-I/MNY
Microchip Technology
IC EEPROM 4KBIT SPI 3MHZ 8TDFN
71V424L12PHGI8
71V424L12PHGI8
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44TSOP II
IS61WV51216BLL-10MLI-TR
IS61WV51216BLL-10MLI-TR
ISSI, Integrated Silicon Solution Inc
IC SRAM 8MBIT PARALLEL 48MINIBGA
MT46V32M16BN-5B:C
MT46V32M16BN-5B:C
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
71421SA55JI
71421SA55JI
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 52PLCC
IDT71P71804S167BQG
IDT71P71804S167BQG
Renesas Electronics America Inc
IC SRAM 18MBIT PARALLEL 165CABGA
MT42L128M32D2KL-25 IT:A
MT42L128M32D2KL-25 IT:A
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 168FBGA
LE25FW406ATT-TLM-H-D
LE25FW406ATT-TLM-H-D
onsemi
IC FLASH MEM 4MBIT SERIAL 8MSOP
MTFC32GAPALBH-AIT ES
MTFC32GAPALBH-AIT ES
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
S25FL256SDPNFV001
S25FL256SDPNFV001
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 8WSON
Вас также может заинтересовать
MT48V8M16LFB4-8 XT:G
MT48V8M16LFB4-8 XT:G
Micron Technology Inc.
IC DRAM 128MBIT PARALLEL 54VFBGA
M29DW640F70N6E
M29DW640F70N6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
MT41J64M16JT-15E:G
MT41J64M16JT-15E:G
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 96FBGA
MT47R128M8CF-3:H
MT47R128M8CF-3:H
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 60FBGA
MT47H256M8EB-25E AIT:C
MT47H256M8EB-25E AIT:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 60FBGA
PC28F256P33B2F TR
PC28F256P33B2F TR
Micron Technology Inc.
IC FLASH 256MBIT PAR 64EASYBGA
M29F400FB55M32
M29F400FB55M32
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 44SO
MT49H32M18SJ-18:B TR
MT49H32M18SJ-18:B TR
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 144FBGA
MTFC64GAJAEDQ-AAT TR
MTFC64GAJAEDQ-AAT TR
Micron Technology Inc.
IC FLASH 512GBIT MMC 100LBGA
MT18RTF25672FDZ-667H1D6
MT18RTF25672FDZ-667H1D6
Micron Technology Inc.
MODULE DDR2 SDRAM 2GB 240FBDIMM
MT4JTF12864AZ-1G6D1
MT4JTF12864AZ-1G6D1
Micron Technology Inc.
MODULE DDR3 SDRAM 1GB 240UDIMM
MTFDDAK064MBD-1AH12ITYY
MTFDDAK064MBD-1AH12ITYY
Micron Technology Inc.
SSD M500IT 64GB 2.5"