MT53B512M64D4EZ-062 WT:C TR

MT53B512M64D4EZ-062 WT:C TR

Images are for reference only
See Product Specifications

MT53B512M64D4EZ-062 WT:C TR
Описание:
IC DRAM 32GBIT 1600MHZ FBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
MT53B512M64D4EZ-062 WT:C TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT53B512M64D4EZ-062 WT:C TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:40b26bea0864a8c58cc6a5d0790f1ff8
Memory Size:7678aa7ed9f644dcf9e7809292864647
Memory Interface:336d5ebc5436534e61d16e63ddfca327
Clock Frequency:8e3f1dda304cea6766975f0d2f6f863c
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:c20531d8e29fa77f9dfee51d99fadf29
Operating Temperature:2fdaa073b39234602c87f06c00f299e2
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
UPD46184182BF1-E40-EQ1
UPD46184182BF1-E40-EQ1
Renesas Electronics America Inc
DDR SRAM, 1MX18, 0.45NS
24LC02B-I/P
24LC02B-I/P
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
FM25C040ULZEMT8
FM25C040ULZEMT8
Fairchild Semiconductor
EEPROM, 512X8, SERIAL, CMOS
W634GU6QB-09
W634GU6QB-09
Winbond Electronics
4GB DDR3L 1.35V SDRAM, X16, 1066
71V65603S150BG8
71V65603S150BG8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 119PBGA
W25X20BVSNIG
W25X20BVSNIG
Winbond Electronics
IC FLASH 2MBIT SPI 104MHZ 8SOIC
N25Q256A73ESF40F TR
N25Q256A73ESF40F TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 16SOP2
70V9279S7PRFI
70V9279S7PRFI
Renesas Electronics America Inc
IC SRAM 512KBIT PARALLEL 128TQFP
MT53D1536M32D6BE-053 WT ES:D
MT53D1536M32D6BE-053 WT ES:D
Micron Technology Inc.
IC DRAM 48GBIT 1866MHZ FBGA
MT29F4G08ABAFAM70A3WC1
MT29F4G08ABAFAM70A3WC1
Micron Technology Inc.
SLC 4G DIE 512MX8
S29GL512S11TFI020
S29GL512S11TFI020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP
S29GL256N10FFI013
S29GL256N10FFI013
Infineon Technologies
IC FLASH MEMORY NOR PARALLEL
Вас также может заинтересовать
MT41K256M16V00HWC1
MT41K256M16V00HWC1
Micron Technology Inc.
IC FLASH NAND 32GX8 TSOP
MT25QL512ABB8E12-0AUT TR
MT25QL512ABB8E12-0AUT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 24TPBGA
MT48LC4M16A2B4-7E:G TR
MT48LC4M16A2B4-7E:G TR
Micron Technology Inc.
IC DRAM 64MBIT PARALLEL 54VFBGA
MT48H4M16LFB4-8 IT:H TR
MT48H4M16LFB4-8 IT:H TR
Micron Technology Inc.
IC DRAM 64MBIT PARALLEL 54VFBGA
M29W256GH70ZA6F TR
M29W256GH70ZA6F TR
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 64TBGA
MT29C4G48MAAGBAAKS-5 WT
MT29C4G48MAAGBAAKS-5 WT
Micron Technology Inc.
IC FLASH RAM 4GBIT PAR 137VFBGA
M29F800FB55M3F2 TR
M29F800FB55M3F2 TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 44SO
MT29E512G08CMCCBH7-6:C
MT29E512G08CMCCBH7-6:C
Micron Technology Inc.
IC FLASH 512GBIT PAR 152TBGA
MT29C1G12MAAJVAKC-5 IT
MT29C1G12MAAJVAKC-5 IT
Micron Technology Inc.
MCP 64MX16/32MX16 VFBGA
N25Q064A13ESFD0F TR
N25Q064A13ESFD0F TR
Micron Technology Inc.
IC FLASH 64MBIT SPI 108MHZ 16SO
MT53B256M32D1NP-062 AIT:C
MT53B256M32D1NP-062 AIT:C
Micron Technology Inc.
IC DRAM 8GBIT 1600MHZ 200WFBGA
MTFDDAY256MBF-1AN12ABYY
MTFDDAY256MBF-1AN12ABYY
Micron Technology Inc.
SSD 256GB M.2 MLC SATA III 3.3V