MT53D1024M32D4BD-046 WT:D TR

MT53D1024M32D4BD-046 WT:D TR

Images are for reference only
See Product Specifications

MT53D1024M32D4BD-046 WT:D TR
Описание:
IC DRAM 32G 2133MHZ FBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
MT53D1024M32D4BD-046 WT:D TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT53D1024M32D4BD-046 WT:D TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:40b26bea0864a8c58cc6a5d0790f1ff8
Memory Size:37e231f4518efa27d36baf80cea5a4e1
Memory Interface:336d5ebc5436534e61d16e63ddfca327
Clock Frequency:6424081c5da3ca14adffbf617528c461
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:c20531d8e29fa77f9dfee51d99fadf29
Operating Temperature:2fdaa073b39234602c87f06c00f299e2
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
24AA08T-I/MNY
24AA08T-I/MNY
Microchip Technology
IC EEPROM 8KBIT I2C 400KHZ 8TDFN
AS4C2M32SA-7TCNTR
AS4C2M32SA-7TCNTR
Alliance Memory, Inc.
IC DRAM 64MBIT PAR 86TSOP II
71V3576S133PFGI
71V3576S133PFGI
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 100TQFP
MR25H40VDFR
MR25H40VDFR
Everspin Technologies Inc.
IC RAM 4M SPI 40MHZ 8DFN
AT27C010L-45JI
AT27C010L-45JI
Microchip Technology
IC EPROM 1MBIT PARALLEL 32PLCC
MT29F2G08ABDHC-ET:D TR
MT29F2G08ABDHC-ET:D TR
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 63VFBGA
IDT71V416S12Y
IDT71V416S12Y
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44SOJ
MT48LC16M16A2P-6A AAT:G
MT48LC16M16A2P-6A AAT:G
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
AS4C512M8D3A-12BANTR
AS4C512M8D3A-12BANTR
Alliance Memory, Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
BR24G128F-3AGTE2
BR24G128F-3AGTE2
Rohm Semiconductor
IC EEPROM 128KBIT I2C 1MHZ 8SOP
S25FS256SAGMFV000
S25FS256SAGMFV000
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
S29JL032J60BHI313
S29JL032J60BHI313
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48FBGA
Вас также может заинтересовать
MT25TL512BBA8E12-0AAT
MT25TL512BBA8E12-0AAT
Micron Technology Inc.
IC FLASH 512MBIT SPI 24TPBGA
MT28F400B3WG-8 TET TR
MT28F400B3WG-8 TET TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP I
MT29C2G48MAKLCJI-6 IT
MT29C2G48MAKLCJI-6 IT
Micron Technology Inc.
IC FLASH RAM 2GBIT PAR 166MHZ
MT29C8G96MAAFBACKD-5 WT TR
MT29C8G96MAAFBACKD-5 WT TR
Micron Technology Inc.
IC FLASH RAM 8GBIT PAR 200MHZ
MT46H256M32R4JV-5 IT:B
MT46H256M32R4JV-5 IT:B
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 168VFBGA
M58LR256KB70ZQ5W TR
M58LR256KB70ZQ5W TR
Micron Technology Inc.
IC FLASH 256MBIT PAR 88TFBGA
MT41K2G4SN-107:A TR
MT41K2G4SN-107:A TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT29E2T08CTCCBJ7-6:C TR
MT29E2T08CTCCBJ7-6:C TR
Micron Technology Inc.
IC FLASH 2TB PARALLEL 152LBGA
N25Q064A13E12D1E
N25Q064A13E12D1E
Micron Technology Inc.
IC FLASH 64MBIT SPI 24TPBGA
MT46H1DBB5-DC TR
MT46H1DBB5-DC TR
Micron Technology Inc.
IC MOBILE DDR 512M NAX16 FBGA
MT53B384M64D4NH-062 WT ES:B
MT53B384M64D4NH-062 WT ES:B
Micron Technology Inc.
IC DRAM 24GBIT 1600MHZ 272WFBGA
MT41K512M8V90BWC1
MT41K512M8V90BWC1
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL