MT53D256M64D4NY-046 XT:B

MT53D256M64D4NY-046 XT:B

Images are for reference only
See Product Specifications

MT53D256M64D4NY-046 XT:B
Описание:
IC DRAM 16GBIT 2133MHZ
Упаковка:
Tray
Datasheet:
MT53D256M64D4NY-046 XT:B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT53D256M64D4NY-046 XT:B
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:40b26bea0864a8c58cc6a5d0790f1ff8
Memory Size:cef447a45481d292d0717e056e1b6089
Memory Interface:336d5ebc5436534e61d16e63ddfca327
Clock Frequency:6424081c5da3ca14adffbf617528c461
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:c20531d8e29fa77f9dfee51d99fadf29
Operating Temperature:0b44d810ac4180ca7cd91a8a36c4a43b
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MD2114AL-3/B
MD2114AL-3/B
Rochester Electronics, LLC
1K X 4 SRAM
NM93C66AN
NM93C66AN
Fairchild Semiconductor
EEPROM, 256X16, SERIAL PDIP8
W29N01HVBINF TR
W29N01HVBINF TR
Winbond Electronics
1G-BIT NAND FLASH, 3V, 4-BIT ECC
71V65603S100BQG
71V65603S100BQG
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 165CABGA
MT48LC8M32LFF5-8 IT
MT48LC8M32LFF5-8 IT
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 90VFBGA
7027L20PF
7027L20PF
Renesas Electronics America Inc
IC SRAM 512KBIT PARALLEL 100TQFP
IS42S16320B-7BLI-TR
IS42S16320B-7BLI-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 54WBGA
IS49NLC36800-25EBL
IS49NLC36800-25EBL
ISSI, Integrated Silicon Solution Inc
IC DRAM 288MBIT PAR 144FCBGA
MT53B768M64D8NK-053 WT ES:D
MT53B768M64D8NK-053 WT ES:D
Micron Technology Inc.
IC DRAM 48GBIT 1866MHZ 366WFBGA
CY7C1061AV33-10BAC
CY7C1061AV33-10BAC
Infineon Technologies
IC SRAM 16MBIT PARALLEL 60FBGA
S29GL032N11FFIS10
S29GL032N11FFIS10
Infineon Technologies
IC FLASH 32MBIT PARALLEL 64FBGA
CY14B101LA-ZS45XIKA
CY14B101LA-ZS45XIKA
Rochester Electronics, LLC
NON-VOLATILE SRAM
Вас также может заинтересовать
MT29F1G08ABAEAH4-AATX:E
MT29F1G08ABAEAH4-AATX:E
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 63VFBGA
PC28F128P30TF65A
PC28F128P30TF65A
Micron Technology Inc.
IC FLASH 128MBIT PAR 64EASYBGA
MT46H32M32LFMA-6 IT:B TR
MT46H32M32LFMA-6 IT:B TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 168WFBGA
MT29F64G08AECDBJ4-6:D
MT29F64G08AECDBJ4-6:D
Micron Technology Inc.
IC FLASH 64GBIT PARALLEL 132VBGA
MT29C8G96MAZBBDKD-48 IT TR
MT29C8G96MAZBBDKD-48 IT TR
Micron Technology Inc.
IC FLASH RAM 8GBIT PAR 208MHZ
EDFP112A3PB-JDTJ-F-R TR
EDFP112A3PB-JDTJ-F-R TR
Micron Technology Inc.
IC DRAM 24GBIT PARALLEL 933MHZ
MT53D1G64D8SQ-053 WT:E
MT53D1G64D8SQ-053 WT:E
Micron Technology Inc.
IC DRAM 64GBIT 1866MHZ 556VFBGA
MT29RZ4B2DZZHHTB-18I.80F TR
MT29RZ4B2DZZHHTB-18I.80F TR
Micron Technology Inc.
IC FLASH RAM 4GBIT PAR 162VFBGA
MT53D384M32D2DS-053 WT:C TR
MT53D384M32D2DS-053 WT:C TR
Micron Technology Inc.
IC DRAM 12GBIT 1866MHZ 200WFBGA
MTFC128GAJAECE-AAT
MTFC128GAJAECE-AAT
Micron Technology Inc.
IC FLASH 1TB MMC 169LFBGA
MT53D8D1AJS-DC
MT53D8D1AJS-DC
Micron Technology Inc.
SPECIAL/CUSTOM LPDDR4
MT8HTF12864AZ-1GAH1
MT8HTF12864AZ-1GAH1
Micron Technology Inc.
MODULE DDR2 SDRAM 1GB 240UDIMM