MT53E128M32D2DS-046 WT:A

MT53E128M32D2DS-046 WT:A

Images are for reference only
See Product Specifications

MT53E128M32D2DS-046 WT:A
Описание:
IC DRAM 4GBIT 2.133GHZ 200WFBGA
Упаковка:
Tray
Datasheet:
MT53E128M32D2DS-046 WT:A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT53E128M32D2DS-046 WT:A
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:40b26bea0864a8c58cc6a5d0790f1ff8
Memory Size:4faa7677af2010470c70ace0fa18ec22
Memory Interface:336d5ebc5436534e61d16e63ddfca327
Clock Frequency:6424081c5da3ca14adffbf617528c461
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:c20531d8e29fa77f9dfee51d99fadf29
Operating Temperature:2fdaa073b39234602c87f06c00f299e2
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8c9b5006d481048b6783f920aaeb69f3
Supplier Device Package:1009764730fdcaedb3a3d1f02261bcf0
In Stock: 1360
Stock:
1360 Can Ship Immediately
  • Делиться:
Для использования с
HN58X2508TIAG#S0
HN58X2508TIAG#S0
Renesas Electronics America Inc
SPI 8K EEPROM (1024 X 8-BIT)
MT41K512M16HA-125:ATR
MT41K512M16HA-125:ATR
Alliance Memory, Inc.
8G, DDR3L, 512M X 16, 1.35V, 96-
FM93C66AEMT8X
FM93C66AEMT8X
Fairchild Semiconductor
EEPROM, 256X16, SERIAL, CMOS
24AA16T-E/MNY
24AA16T-E/MNY
Microchip Technology
IC EEPROM 16KBIT I2C 8TDFN
7006L15JG8
7006L15JG8
Renesas Electronics America Inc
IC SRAM 128KBIT PARALLEL 68PLCC
DS1345WP-100IND
DS1345WP-100IND
Analog Devices Inc./Maxim Integrated
IC NVSRAM 1MBIT PAR 34PWRCAP
AT24C256W-10SU-2.7
AT24C256W-10SU-2.7
Microchip Technology
IC EEPROM 256KBIT I2C 1MHZ 8SOIC
MT48V4M32LFF5-8 IT:G TR
MT48V4M32LFF5-8 IT:G TR
Micron Technology Inc.
IC DRAM 128MBIT PARALLEL 90VFBGA
7006S25PF8
7006S25PF8
Renesas Electronics America Inc
IC SRAM 128KBIT PARALLEL 64TQFP
71V321S25PF
71V321S25PF
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 64TQFP
MT53B256M64D2TP-062 L XT:C
MT53B256M64D2TP-062 L XT:C
Micron Technology Inc.
IC DRAM 16GBIT 1600MHZ FBGA
CY14B104NA-BA20XIT
CY14B104NA-BA20XIT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA
Вас также может заинтересовать
MT25QU256ABA8E12-0AAT TR
MT25QU256ABA8E12-0AAT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 24TPBGA
MT48H8M16LFB4-8 IT TR
MT48H8M16LFB4-8 IT TR
Micron Technology Inc.
IC DRAM 128MBIT PARALLEL 54VFBGA
MT46V64M8P-5B:F TR
MT46V64M8P-5B:F TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 66TSOP
MT46H16M32LFCX-5 IT:B
MT46H16M32LFCX-5 IT:B
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 90VFBGA
M25PX16-VMW6TG TR
M25PX16-VMW6TG TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M45PE10S-VMN6P
M45PE10S-VMN6P
Micron Technology Inc.
IC FLASH 1MBIT SPI 75MHZ 8SO
MT53B1DBNP-DC
MT53B1DBNP-DC
Micron Technology Inc.
IC DRAM 200WFBGA
MT29F128G08CBEBBL85C3WC1-R
MT29F128G08CBEBBL85C3WC1-R
Micron Technology Inc.
IC FLASH 128GBIT PARALLEL DIE
MT9VDDT3272HY-40BG2
MT9VDDT3272HY-40BG2
Micron Technology Inc.
MODULE DDR SDRAM 256MB 200SODIMM
MT8VDDT6464AY-335DB
MT8VDDT6464AY-335DB
Micron Technology Inc.
MODULE DDR SDRAM 512MB 184UDIMM
MTA16ATF1G64HZ-2G3A2
MTA16ATF1G64HZ-2G3A2
Micron Technology Inc.
MODULE DDR4 SDRAM 8GB 260SODIMM
MTA001A08BA-002
MTA001A08BA-002
Micron Technology Inc.
MEMORY MODULE POWERGEM