MT53E256M32D2DS-053 AIT:B TR

MT53E256M32D2DS-053 AIT:B TR

Images are for reference only
See Product Specifications

MT53E256M32D2DS-053 AIT:B TR
Описание:
IC DRAM 8GBIT 1.866GHZ 200WFBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
MT53E256M32D2DS-053 AIT:B TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT53E256M32D2DS-053 AIT:B TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:40b26bea0864a8c58cc6a5d0790f1ff8
Memory Size:05f447d054d3501332350b5b0eeb7c7b
Memory Interface:336d5ebc5436534e61d16e63ddfca327
Clock Frequency:a96c403fa9870b31cf3f5d92b6fff60c
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:c20531d8e29fa77f9dfee51d99fadf29
Operating Temperature:45558d1e10bd3de54f5b943037ce61b0
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8c9b5006d481048b6783f920aaeb69f3
Supplier Device Package:1009764730fdcaedb3a3d1f02261bcf0
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MK22FN1M0VLL12557
MK22FN1M0VLL12557
NXP USA Inc.
KINETIS K22: 120MHZ CORTEX M4F P
AS7C31025B-20TJCN
AS7C31025B-20TJCN
Alliance Memory, Inc.
IC SRAM 1MBIT PARALLEL 32SOJ
W25N02JWSFIF
W25N02JWSFIF
Winbond Electronics
2G-BIT SERIAL NAND FLASH, 1.8V
AT93C66-10SI-1.8
AT93C66-10SI-1.8
Microchip Technology
IC EEPROM 4KBIT SPI 2MHZ 8SOIC
IS41LV16105B-50TL
IS41LV16105B-50TL
ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PAR 44TSOP II
PC28F512M29EWL0
PC28F512M29EWL0
Micron Technology Inc.
IC FLASH 512MBIT PARALLEL 64FBGA
MT41K512M8RH-125 V:E
MT41K512M8RH-125 V:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
N25Q256A83ESF40E
N25Q256A83ESF40E
Micron Technology Inc.
IC FLASH 256MBIT SPI 16SOP2
N25Q016A11EV7A0
N25Q016A11EV7A0
Micron Technology Inc.
IC FLASH 16MBIT SPI 108MHZ DIE
FT24C04A-EMR-B
FT24C04A-EMR-B
Fremont Micro Devices Ltd
IC EEPROM 4KBIT I2C 1MHZ 8MSOP
MT53B1024M64D8WF-062 WT ES:D
MT53B1024M64D8WF-062 WT ES:D
Micron Technology Inc.
IC DRAM 64GBIT 1600MHZ
W25Q256JVMIM TR
W25Q256JVMIM TR
Winbond Electronics
SPIFLASH, 3V, 256M-BIT, 4KB UNIF
Вас также может заинтересовать
MT58L128L36P1T-7.5
MT58L128L36P1T-7.5
Micron Technology Inc.
CACHE SRAM, 128KX36, 4NS PQFP100
M28W320ECT70ZB6T TR
M28W320ECT70ZB6T TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 47TFBGA
MTFC8GACAENS-5M AIT
MTFC8GACAENS-5M AIT
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA
MT46V128M4BN-75:D
MT46V128M4BN-75:D
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
MT47H128M8HQ-3 IT:G
MT47H128M8HQ-3 IT:G
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 60FBGA
MT47H32M16HR-25E IT:G TR
MT47H32M16HR-25E IT:G TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
MT29RZ1CVCZZHGTN-18 W.85H TR
MT29RZ1CVCZZHGTN-18 W.85H TR
Micron Technology Inc.
IC FLASH RAM 1GBIT PAR 121VFBGA
EDF8164A3PK-JD-F-R TR
EDF8164A3PK-JD-F-R TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 216FBGA
MT9VDDT3272HY-335G2
MT9VDDT3272HY-335G2
Micron Technology Inc.
MODULE DDR SDRAM 256MB 200SODIMM
MT9LSDT1672AG-133G3
MT9LSDT1672AG-133G3
Micron Technology Inc.
MODULE SDRAM 128MB 168UDIMM
MT4VDDT3232UY-6K1
MT4VDDT3232UY-6K1
Micron Technology Inc.
MODULE DDR SDRAM 128MB 100UDIMM
MT9JSF25672AZ-1G4K1
MT9JSF25672AZ-1G4K1
Micron Technology Inc.
MODULE DDR3 SDRAM 2GB 240UDIMM