MT53E512M64D2HJ-046 WT:B

MT53E512M64D2HJ-046 WT:B

Images are for reference only
See Product Specifications

MT53E512M64D2HJ-046 WT:B
Описание:
IC DRAM LPDDR4 32G 512MX64 FBGA
Упаковка:
Tray
Datasheet:
MT53E512M64D2HJ-046 WT:B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MT53E512M64D2HJ-046 WT:B
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:40b26bea0864a8c58cc6a5d0790f1ff8
Memory Size:336d5ebc5436534e61d16e63ddfca327
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:6424081c5da3ca14adffbf617528c461
Write Cycle Time - Word, Page:372ba9b669a7baf6dbcfc5501a79e169
Access Time:49fa7314b3b0311c62ed8e24dc6a1c9f
Voltage - Supply:0bf075e77f5bb7a848c6d07bfdcf8b5f
Operating Temperature:6ab30f54ad1cc3cf217e14506293c461
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:33a277ab320450e474cdab66ed1819c9
Supplier Device Package:e26b3b9d5e60f4e26fa23892d236b3e3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
24LC04BT-I/MNY
24LC04BT-I/MNY
Microchip Technology
IC EEPROM 4KBIT I2C 400KHZ 8TDFN
W25N01JWZEIT TR
W25N01JWZEIT TR
Winbond Electronics
1G-BIT SERIAL NAND FLASH, 1.8V
71V321L35JG8
71V321L35JG8
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 52PLCC
70V3599S166BFG
70V3599S166BFG
Renesas Electronics America Inc
IC SRAM 4.5MBIT PAR 208FPBGA
DS1230AB-200
DS1230AB-200
Analog Devices Inc./Maxim Integrated
IC NVSRAM 256KBIT PAR 28EDIP
M29F800DB70M6
M29F800DB70M6
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 44SO
IS43LR16320B-6BLI
IS43LR16320B-6BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 60TFBGA
MT48LC16M16A2B4-6A AIT:G
MT48LC16M16A2B4-6A AIT:G
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 54VFBGA
MT29F64G08CBCGBWP-B:G
MT29F64G08CBCGBWP-B:G
Micron Technology Inc.
IC FLSH 64GBIT PARALLEL 48TSOP I
W948D6FBHX5G
W948D6FBHX5G
Winbond Electronics
IC DRAM 256MBIT PARALLEL 60VFBGA
BR24T02FVT-WGE2
BR24T02FVT-WGE2
Rohm Semiconductor
IC EEPROM 2KBIT I2C 8TSSOPB
STK17TA8-RF45ITR
STK17TA8-RF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
Вас также может заинтересовать
MT25QU256ABA1EW7-0SIT TR
MT25QU256ABA1EW7-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT28EW256ABA1HJS-0SIT TR
MT28EW256ABA1HJS-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 56TSOP
MT28F008B3VG-9 B TR
MT28F008B3VG-9 B TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP I
MT29F32G08AFABAWP-IT:B
MT29F32G08AFABAWP-IT:B
Micron Technology Inc.
IC FLSH 32GBIT PARALLEL 48TSOP I
MT41J128M16JT-125:K
MT41J128M16JT-125:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT49H16M36BM-25:A
MT49H16M36BM-25:A
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 144UBGA
N25Q032A13E1240E
N25Q032A13E1240E
Micron Technology Inc.
IC FLASH 32MBIT SPI 24TPBGA
MT29F1G01AAADDH4:D TR
MT29F1G01AAADDH4:D TR
Micron Technology Inc.
IC FLASH 1GBIT SPI 63VFBGA
MT47H32M16HR-25E:G TR
MT47H32M16HR-25E:G TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
MTFC32GAOALEA-WT ES
MTFC32GAOALEA-WT ES
Micron Technology Inc.
EMCP 256G
MT53B512M16D1Z11MWC1
MT53B512M16D1Z11MWC1
Micron Technology Inc.
LPDDR4 8G DIE 512MX16
MTA18ADF2G72AZ-2G6E2
MTA18ADF2G72AZ-2G6E2
Micron Technology Inc.
MODULE DDR4 16GB EUDIMM