NAND02GW3B2DZA6E

NAND02GW3B2DZA6E

Images are for reference only
See Product Specifications

NAND02GW3B2DZA6E
Описание:
IC FLASH 2GBIT PARALLEL 63VFBGA
Упаковка:
Tray
Datasheet:
NAND02GW3B2DZA6E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NAND02GW3B2DZA6E
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:252927c9338409602b9cac9bab19944a
Memory Size:7e5772bd84ce87a591c2c8d4a8707788
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:336d5ebc5436534e61d16e63ddfca327
Write Cycle Time - Word, Page:598befe738acc907edec52d4cc82fed8
Access Time:a2ae0914ecb8ec833e13c1365b306a6e
Voltage - Supply:2cd0a4018674d195c97a414ad2f03249
Operating Temperature:a0642ad5458e4dac9a3b9b1a9a5604fd
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:9f33d4b9b73cbdd38e7e22a7ce524649
Supplier Device Package:13a1944622bb9a379886aa0feb9706b9
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
W25N512GVPIT TR
W25N512GVPIT TR
Winbond Electronics
512MB SERIAL NAND FLASH, 3V
W9864G6JB-6I TR
W9864G6JB-6I TR
Winbond Electronics
64MB SDR SDRAM X16, 166MHZ, IND
71V67603S150BQI8
71V67603S150BQI8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 165CABGA
AT24C128W-10SC-2.7
AT24C128W-10SC-2.7
Microchip Technology
IC EEPROM 128KBIT I2C 1MHZ 8SOIC
MT48LC64M4A2P-7E:D
MT48LC64M4A2P-7E:D
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
IDT6116LA35TP
IDT6116LA35TP
Renesas Electronics America Inc
IC SRAM 16KBIT PARALLEL 24DIP
AT25DF041A-MH-Y
AT25DF041A-MH-Y
Adesto Technologies
IC FLASH 4MBIT SPI 70MHZ 8UDFN
MTFC4GMUEA-WT TR
MTFC4GMUEA-WT TR
Micron Technology Inc.
IC FLASH 32GBIT MMC 153WFBGA
MT29F8G16ABBCAH4:C
MT29F8G16ABBCAH4:C
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 63VFBGA
FT25C64A-USR-T
FT25C64A-USR-T
Fremont Micro Devices Ltd
IC EEPROM 64KBIT SPI 20MHZ 8SOP
FT24C512A-ESG-T
FT24C512A-ESG-T
Fremont Micro Devices Ltd
IC EEPROM 512KBIT I2C 1MHZ 8SOP
CY27H010-70WC
CY27H010-70WC
Rochester Electronics, LLC
UVPROM, 128KX8, 70NS CDIP32
Вас также может заинтересовать
MT25QL256ABA8ESF-0SIT TR
MT25QL256ABA8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
MT28F008B5VG-8 TET
MT28F008B5VG-8 TET
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP I
M25P80-VMW6G
M25P80-VMW6G
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M29W400DB70ZE6E
M29W400DB70ZE6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TFBGA
MT48H4M16LFB4-75 IT:H
MT48H4M16LFB4-75 IT:H
Micron Technology Inc.
IC DRAM 64MBIT PARALLEL 54VFBGA
MT47H64M16HW-3 IT:H
MT47H64M16HW-3 IT:H
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
M58LT256KSB8ZA6E
M58LT256KSB8ZA6E
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 64TBGA
EMF8132A3MA-DV-F-D
EMF8132A3MA-DV-F-D
Micron Technology Inc.
LPDDR3 SPECIAL/CUSTOM PLASTIC GR
MT49H32M18SJ-18:B TR
MT49H32M18SJ-18:B TR
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 144FBGA
MT29AZ5A3CHHWD-18AAT.84F TR
MT29AZ5A3CHHWD-18AAT.84F TR
Micron Technology Inc.
IC FLASH RAM 4GBIT PAR 162VFBGA
MT44K64M18RB-083F:A TR
MT44K64M18RB-083F:A TR
Micron Technology Inc.
IC RLDRAM 1.125GBIT PAR 168BGA
MT16HTF12864AY-53ED4
MT16HTF12864AY-53ED4
Micron Technology Inc.
MODULE DDR2 SDRAM 1GB 240UDIMM