NAND512W3A2CZA6E

NAND512W3A2CZA6E

Images are for reference only
See Product Specifications

NAND512W3A2CZA6E
Описание:
IC FLSH 512MBIT PARALLEL 63VFBGA
Упаковка:
Tray
Datasheet:
NAND512W3A2CZA6E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NAND512W3A2CZA6E
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Micron Technology Inc.
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:252927c9338409602b9cac9bab19944a
Memory Size:424923369ff72c92aa01a573d129fdf9
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:336d5ebc5436534e61d16e63ddfca327
Write Cycle Time - Word, Page:2578ea895599da39b7b2a88d40ffc56b
Access Time:b0d7994e039b4509c995ea8ecaf1bb5d
Voltage - Supply:2cd0a4018674d195c97a414ad2f03249
Operating Temperature:a0642ad5458e4dac9a3b9b1a9a5604fd
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:9f33d4b9b73cbdd38e7e22a7ce524649
Supplier Device Package:b4db9e374b4d19be5fc5c88c4c775c6c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IS61C3216AL-12KLI-TR
IS61C3216AL-12KLI-TR
ISSI, Integrated Silicon Solution Inc
IC SRAM 512KBIT PARALLEL 44SOJ
71V35761SA183BG8
71V35761SA183BG8
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 119PBGA
AT24C256W-10SU-1.8
AT24C256W-10SU-1.8
Microchip Technology
IC EEPROM 256KBIT I2C 8SOIC
MT48LC8M8A2P-75:G TR
MT48LC8M8A2P-75:G TR
Micron Technology Inc.
IC DRAM 64MBIT PAR 54TSOP II
CAT28F010H90
CAT28F010H90
onsemi
IC FLASH 1MBIT PARALLEL 32TSOP
MT29F128G08AKAAAC5-Z:A
MT29F128G08AKAAAC5-Z:A
Micron Technology Inc.
IC FLASH 128GBIT PARALLEL 52VLGA
PC28F512M29EWHB TR
PC28F512M29EWHB TR
Micron Technology Inc.
IC FLASH 512MBIT PARALLEL 64FBGA
NAND32GW3F2DDI6P TR
NAND32GW3F2DDI6P TR
Micron Technology Inc.
SLC NAND
DS2432X+U
DS2432X+U
Analog Devices Inc./Maxim Integrated
IC EEPROM W/SHA-1 ENG 1KB
BR93C76-WDS6TP
BR93C76-WDS6TP
Rohm Semiconductor
IC EEPROM 8KBIT SPI 2MHZ 8TSSOP
CY7C1523JV18-300BZXC
CY7C1523JV18-300BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY10E422-7DC
CY10E422-7DC
Rochester Electronics, LLC
STANDARD SRAM, 256X4, 7NS10K
Вас также может заинтересовать
MT40A512M8SA-062E AAT:F
MT40A512M8SA-062E AAT:F
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
MT46V64M8BN-5B:F TR
MT46V64M8BN-5B:F TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
M29F002BB70K6E
M29F002BB70K6E
Micron Technology Inc.
IC FLASH 2MBIT PARALLEL 32PLCC
MT49H8M36FM-5 TR
MT49H8M36FM-5 TR
Micron Technology Inc.
IC DRAM 288MBIT PARALLEL 144UBGA
MT48LC4M16A2B4-7E:J
MT48LC4M16A2B4-7E:J
Micron Technology Inc.
IC DRAM 64MBIT PARALLEL 54VFBGA
M29W400FT5AZA6F TR
M29W400FT5AZA6F TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TFBGA
MT53D768M64D8JS-053 WT:D
MT53D768M64D8JS-053 WT:D
Micron Technology Inc.
IC DRAM 48GBIT 1866MHZ 366VFBGA
MT29VZZZAD8HQKWL-053 W.G8C
MT29VZZZAD8HQKWL-053 W.G8C
Micron Technology Inc.
544G
MTFC128GAOAMEA-WT ES TR
MTFC128GAOAMEA-WT ES TR
Micron Technology Inc.
IC FLASH 1TB MMC
MT29F512G08EBHAFJ4-3T:A
MT29F512G08EBHAFJ4-3T:A
Micron Technology Inc.
IC FLASH 512GBIT PAR 132VBGA
MT18KDF1G72PZ-1G6E1
MT18KDF1G72PZ-1G6E1
Micron Technology Inc.
MODULE DDR3L SDRAM 8GB 240RDIMM
MTFDDAV512TDL-1AW1ZABLA
MTFDDAV512TDL-1AW1ZABLA
Micron Technology Inc.
IC SSD FLASH NAND SLC