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See Product Specifications
| номер части: | 2N1016B |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Microsemi Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 737eb469e971742a65ddbeb14ffef9d8 |
| Voltage - Collector Emitter Breakdown (Max): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Vce Saturation (Max) @ Ib, Ic: | 8176d9218754ec054273cfa5d612aabd |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | dc9f0b51239e794b151cef66c313e58f |
| Power - Max: | 9b5578a35635ab11e6c7347a2364017e |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 336d5ebc5436534e61d16e63ddfca327 |
| Package / Case: | 336d5ebc5436534e61d16e63ddfca327 |
| Supplier Device Package: | 667f9d22150c8d7c126886be41b03d8c |
