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See Product Specifications
| номер части: | 2N3960 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Microsemi Corporation |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Voltage - Collector Emitter Breakdown (Max): | fd06a160a7273ee2b718dbba07f948a2 |
| Vce Saturation (Max) @ Ib, Ic: | 4400d4843c1c8ce3e898f9991d22e17d |
| Current - Collector Cutoff (Max): | 441b7615d074155ae02efbc6b5db17dd |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | cab7112738b3ef448735a2fa430ebd38 |
| Power - Max: | cea4ffba309966f9c6d35a027ccc4236 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 8c3586d1cd2b59ea921759540121ba93 |
| Supplier Device Package: | 140add82a3afcc85ead52a5489b8e275 |
