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See Product Specifications
| номер части: | 2N5012 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Microsemi Corporation |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 5ecc0432168b0399ced3837f4c099c74 |
| Voltage - Collector Emitter Breakdown (Max): | 3b06098d9fd4a0e2008f0a5892a164d6 |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 3bf500b5fc240256a048b817a5ab154a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b9afa72821bfd794bf8b479fc0133f1f |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 4e615cbef110d2b405a0bf87696e2ea5 |
| Supplier Device Package: | 9ed8b1a23b5051f7a9d06c624869501f |
