APT13GP120KG

APT13GP120KG

Images are for reference only
See Product Specifications

APT13GP120KG
Описание:
IGBT 1200V 41A 250W TO220
Упаковка:
Tube
Datasheet:
APT13GP120KG Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:APT13GP120KG
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Microsemi Corporation
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:35357b9c8fe4d3273d0237ecc8ff2e75
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):4b4072f37ce2e13ce28211d23ea9ac3f
Current - Collector Pulsed (Icm):80048aebe005b9413929a11bba83f563
Vce(on) (Max) @ Vge, Ic:f87304b5953c36013eb2ec84259b816e
Power - Max:919b6817f7a1d97dc672009d630453af
Switching Energy:22c4d2ff07a5f017cc9156c9a351104c
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:4b6d8e97689e773cd930e1b544e8399f
Td (on/off) @ 25°C:cb5243bb09362d6b088acc8e27441b19
Test Condition:d59cad7309e1937206638ca820fb14af
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46bb638de2ea693de650d7f1c3115468
Supplier Device Package:6feb2b45ec26009c8f2c1a3d6abc4338
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IRGIB6B60KDPBF-INF
IRGIB6B60KDPBF-INF
Infineon Technologies
IGBT W/ULTRAFAST SOFT RECOVERY D
HGTB12N60D1C
HGTB12N60D1C
Harris Corporation
12A, 600V N-CHANNEL IGBT
SGD04N60BUMA1
SGD04N60BUMA1
Infineon Technologies
SGD04N60 - FAST IGBT IN NPT-TECH
STGYA120M65DF2AG
STGYA120M65DF2AG
STMicroelectronics
IGBT
RJP2557DPK-E
RJP2557DPK-E
Renesas Electronics America Inc
HIGH SPEED IGBT, 270V, 50A
FGM622S
FGM622S
Sanken
IGBT 600V 16A TO-3PF
IXYX120N120B3
IXYX120N120B3
IXYS
IGBT
IXXN340N65B4
IXXN340N65B4
IXYS
IGBT MODULE DISC IGBT SOT227B
IXGK60N60B2D1
IXGK60N60B2D1
IXYS
IGBT 600V 75A 500W TO264
SKW07N120FKSA1
SKW07N120FKSA1
Infineon Technologies
IGBT 1200V 16.5A 125W TO247
SIGC25T60SNCX1SA2
SIGC25T60SNCX1SA2
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGTH00TS65DGC11
RGTH00TS65DGC11
Rohm Semiconductor
IGBT 650V 85A 277W TO-247N
Вас также может заинтересовать
MMAD1109E3/TR13
MMAD1109E3/TR13
Microsemi Corporation
TVS DIODE 75VWM 14SOIC
SMCJ5665AE3/TR13
SMCJ5665AE3/TR13
Microsemi Corporation
TVS DIODE 171VWM 274VC DO214AB
SMCJ6070A/TR13
SMCJ6070A/TR13
Microsemi Corporation
TVS DIODE 160VWM 278VC DO214AB
MXLP5KE30CAE3
MXLP5KE30CAE3
Microsemi Corporation
TVS DIODE 30VWM 48.4VC DO204AL
MPLAD6.5KP51A
MPLAD6.5KP51A
Microsemi Corporation
TVS DIODE 51VWM 82.4VC PLAD
ARF444
ARF444
Microsemi Corporation
PWR MOSFET RF N-CH 900V TO-247AD
APT130SM70B
APT130SM70B
Microsemi Corporation
SICFET N-CH 700V 110A TO247-3
A1240A-TQ176C
A1240A-TQ176C
Microsemi Corporation
IC FPGA 104 I/O 176TQFP
A1440A-VQ100C
A1440A-VQ100C
Microsemi Corporation
IC FPGA 83 I/O 100VQFP
BR230-890C1-48V-025M
BR230-890C1-48V-025M
Microsemi Corporation
RELAY GEN PURPOSE 4PDT 10A 48V
BR246-20B1-6V
BR246-20B1-6V
Microsemi Corporation
RELAY GEN PURPOSE DPDT 10A 6V
BR246-20B1-6V-002M
BR246-20B1-6V-002M
Microsemi Corporation
RELAY GEN PURPOSE DPDT 10A 6V