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See Product Specifications
| номер части: | MDS1100 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | Microsemi Corporation |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 2bd54fb5ea58d18b3f30305b1a72e9c9 |
| Frequency - Transition: | 87a45da8e3e19f991d8b6b245536a2d1 |
| Noise Figure (dB Typ @ f): | 336d5ebc5436534e61d16e63ddfca327 |
| Gain: | 9e2cdf8cf6e60b622784060c97ef00e9 |
| Power - Max: | f072def8c495dcbd3ff14a181bd90121 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 4456e39b0488bffc922e5e07672b0671 |
| Current - Collector (Ic) (Max): | 9b887200e89510899237dee7b584064e |
| Operating Temperature: | 51a4dd9c15d0a730371e943785f48353 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 794821edeab39954effe0e7450a085d7 |
| Supplier Device Package: | 794821edeab39954effe0e7450a085d7 |
