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See Product Specifications
| номер части: | MS1006 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | Microsemi Corporation |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 9bbf945aa911187bd60c876e8ac573f7 |
| Frequency - Transition: | 1f133dc7287aa3dab2380f8e98bca006 |
| Noise Figure (dB Typ @ f): | 336d5ebc5436534e61d16e63ddfca327 |
| Gain: | 9ca6b9c6316f93fcb3a38cb32b9cc1fc |
| Power - Max: | 73e3111f0980fa696d98a28e1aeb981a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 812ffd60c29709a5e5df7abe367a9b94 |
| Current - Collector (Ic) (Max): | fcb26cc7a52c28add4556a4ba1c1221e |
| Operating Temperature: | c8d221c930636f17efa825f46a0c9978 |
| Mounting Type: | 4bdb778fe01fdf35a3cdb6e87444f9c2 |
| Package / Case: | 4ed10364720e0c5e58c4aa7bd9d5d31d |
| Supplier Device Package: | 4ed10364720e0c5e58c4aa7bd9d5d31d |
