BSH108,215

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See Product Specifications

Mfr. #:

BSH108,215

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 30V 1.9A TO236AB

Упаковка:

Tape & Reel (TR)

Datasheet:

BSH108,215 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSH108,215
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	d3d0f761a79bb21f369191b37fdfe8af
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	7887256919f818c5048831aab5cd98c9
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	419b1c916705b9baf81c256fa95edd58
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	582acc1a36bd6c8fb6e90f7cb8cd801e
Operating Temperature:	55ce755c497e7a4a96e8f6d89292982a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f0a0660dda21f7b338489b4f9c96cbed
Package / Case:	51bf93173785f0f3fc2d8b70cf119689

In Stock: 18092

Stock:

18092 Can Ship Immediately