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номер части: | GAN041-650WSBQ |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - FETs, MOSFETs - Single |
Производитель: | Nexperia USA Inc. |
Упаковка: | Tube |
Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
FET Type: | 43272ae8a787f198ca6b6227abc259ef |
Technology: | dd1bcf07f026348eb60dd722e684f34f |
Drain to Source Voltage (Vdss): | 347f255197950e6b02089b73b6a8acdd |
Current - Continuous Drain (Id) @ 25°C: | cd8dc1b1656dbc82aecbc62d4b15c7da |
Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
Rds On (Max) @ Id, Vgs: | 6099afffd7584cd69d1303fed607af07 |
Vgs(th) (Max) @ Id: | bc8c17202dd4d8078d00ff849c1c8655 |
Gate Charge (Qg) (Max) @ Vgs: | 730e0e196e702729583c9674383eddc3 |
Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
Input Capacitance (Ciss) (Max) @ Vds: | c6cf6110556579dc63bd089399f7dd5a |
FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
Power Dissipation (Max): | 9b9c6ee8cb77bbdfe155e768792e0681 |
Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
Supplier Device Package: | 748a8539a6c3c7dbdb455218c72fac40 |
Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |