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| номер части: | GAN063-650WSAQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Nexperia USA Inc. |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | dd1bcf07f026348eb60dd722e684f34f |
| Drain to Source Voltage (Vdss): | 347f255197950e6b02089b73b6a8acdd |
| Current - Continuous Drain (Id) @ 25°C: | e93c0794cdec75e3f8bda7bc735eba60 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 2e46986b20cb3faed96c0c9557ce89bb |
| Vgs(th) (Max) @ Id: | bc8c17202dd4d8078d00ff849c1c8655 |
| Gate Charge (Qg) (Max) @ Vgs: | b8a0640fe9525616e9f66bccd7456bd2 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 14c091f49d6f1fcb545da7eb35ace7cf |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9a50ab350134119e8201dfec0c2303e0 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 748a8539a6c3c7dbdb455218c72fac40 |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |