GAN063-650WSAQ

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Mfr. #:

GAN063-650WSAQ

Mfr.:

Nexperia USA Inc.

Описание:

GANFET N-CH 650V 34.5A TO247-3

Упаковка:

Tube

Datasheet:

GAN063-650WSAQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GAN063-650WSAQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	dd1bcf07f026348eb60dd722e684f34f
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	e93c0794cdec75e3f8bda7bc735eba60
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	2e46986b20cb3faed96c0c9557ce89bb
Vgs(th) (Max) @ Id:	bc8c17202dd4d8078d00ff849c1c8655
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	14c091f49d6f1fcb545da7eb35ace7cf
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9a50ab350134119e8201dfec0c2303e0
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	748a8539a6c3c7dbdb455218c72fac40
Package / Case:	748a8539a6c3c7dbdb455218c72fac40

In Stock: 0

Stock:

0 Can Ship Immediately