PDTA123JQB-QZ

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Mfr. #:

PDTA123JQB-QZ

Mfr.:

Nexperia USA Inc.

Описание:

PDTA123JQB-Q/SOT8015/DFN1110D-

Упаковка:

Tape & Reel (TR)

Datasheet:

PDTA123JQB-QZ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PDTA123JQB-QZ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Производитель:	Nexperia USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	61de53416e92e38b3c8ecc0dac09cf4e
Current - Collector (Ic) (Max):	63f9c0b014d9e8860c3239712547a74a
Voltage - Collector Emitter Breakdown (Max):	1c53213259cb70ca6e36d7a9c97e7231
Resistor - Base (R1):	e85102c5e32a145a3450a496c2a5e52d
Resistor - Emitter Base (R2):	942094f166c564b47b30fc312241d4ad
DC Current Gain (hFE) (Min) @ Ic, Vce:	60c2e828c07a3c61b47e1d8a84723411
Vce Saturation (Max) @ Ib, Ic:	6140e97446a204e2db30877b6e91a840
Current - Collector Cutoff (Max):	32b393dd42a00176cc680e2867c85be4
Frequency - Transition:	e84b1a03cdbe3ed801f5f13b2fa595dc
Power - Max:	3b7206c5bb113ea020424efe7e339855
Mounting Type:	19594f10b77d3a5cc29d4f900f7ee637
Package / Case:	140ae768c8b93f831f3d042a6e70d753
Supplier Device Package:	ad237513047380ee44e9459638723c36

In Stock: 0

Stock:

0 Can Ship Immediately