PHB27NQ10T,118

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Mfr. #:

PHB27NQ10T,118

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 100V 28A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHB27NQ10T,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHB27NQ10T,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	eb744f26e77c633f46572ea54111f2c4
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	57c02ed7f3ebb6e4c472c0c19bdbe977
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	39352bee88f42a0566529683068d49d4
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	1b73cdfb22a7f63b3447b3f5c7ae911f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	eab462c69b290ca6c30caf291e93b8e7
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956