PMXB360ENEAZ

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Mfr. #:

PMXB360ENEAZ

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 80V 1.1A DFN1010D-3

Упаковка:

Tape & Reel (TR)

Datasheet:

PMXB360ENEAZ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMXB360ENEAZ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	d3a71c41b40fb91020ded6c11f992482
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	53eef4383070e6e370a7f78ea94aa701
Vgs(th) (Max) @ Id:	e0c9fb3922dd907002f612a4678f513e
Gate Charge (Qg) (Max) @ Vgs:	0559ef2025bc3f34db7de3401e77c0f5
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7017de8f378fdeb91165a06c3607a0fb
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	309a3d2d1c28148efd9e845849f893e0
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	1796a4a8886b1eae662b782b93634663
Package / Case:	140ae768c8b93f831f3d042a6e70d753