PMZB370UNE,315-NEX

Images are for reference only
See Product Specifications

Mfr. #:

PMZB370UNE,315-NEX

Mfr.:

Nexperia USA Inc.

Описание:

EFFECT TRANSISTOR, 0.9A I(D), 30

Упаковка:

Bulk

Datasheet:

PMZB370UNE,315-NEX Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMZB370UNE,315-NEX
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	8470eb8dfcc024e16efe4c6281933711
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	020cb1c1bc1828a7e20092232e254773
Vgs(th) (Max) @ Id:	a088a3fb13d7337ab30ee2cdda2f3caa
Gate Charge (Qg) (Max) @ Vgs:	15cf9d579b7d581f08118c8721413423
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	d74eab8300aebc4eb016be9c3b080f55
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	733758913b59970257c9b1590eb9ed7b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	206e763e75b22ff7f967fa1ab5cf74b8
Package / Case:	fd0564f405b2eae0543f45927c1efab9