PSMN130-200D,118-NEX

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See Product Specifications

Mfr. #:

Mfr.:

Nexperia USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR, 2

Упаковка:

Bulk

Datasheet:

PSMN130-200D,118-NEX Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN130-200D,118-NEX
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	44fb8dcca168a71f877964651b9b44aa
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	cc5bc3471edf1ed2824b6bc9fb5ecc10
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	f42b3edaa3b0932caf53a646d86ff897
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	44ca76d99067ae33a3711a9393de5124
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3b4979fdef3ecbb1da8880119fdf6552
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95