PSMN4R3-80ES,127

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Mfr. #:

PSMN4R3-80ES,127

Mfr.:

Nexperia USA Inc.

Описание:

MOSFET N-CH 80V 120A I2PAK

Упаковка:

Bulk

Datasheet:

PSMN4R3-80ES,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN4R3-80ES,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Nexperia USA Inc.
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	4e16c9915f9d90c9093be8c32b98de26
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	a9167c1be9b57a631c0e53d6de15bb57
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3715dc17cd8a3eb9e1b70eda9aee3332
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	28434c22f0d430a3b0cf5aca8a9fe1dd
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687