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See Product Specifications
| номер части: | 2N2102 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | e61c2e8e49eca0e4942ddb2b339c10b0 |
| Voltage - Collector Emitter Breakdown (Max): | 07ec5de588af69453712bad1d6d91197 |
| Vce Saturation (Max) @ Ib, Ic: | c45e2fffe061d40aa7ce79d412168b5a |
| Current - Collector Cutoff (Max): | 7f75c5969af9a2b0865357c1c1a9c330 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | f2383bfc0078b71f645ffbce23dabbe8 |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | dfb4ad46e1ac805451b8f397e97630b4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 93920dff4ce3e5abb3b2aa31e508ea21 |
| Supplier Device Package: | ab7b2f6fad5c0b7d176e1264a6e6a29f |
