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See Product Specifications
| номер части: | 2N3583 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | d2d3faf5133da66868ed41234fc6f262 |
| Voltage - Collector Emitter Breakdown (Max): | e8735b36d2ea50d4a3ddc8725310ec0e |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 238e4cb2eaf8213a58d10b14cd725d2d |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 4c06c18bde4556adf8dc8a75a302da18 |
| Power - Max: | 10ce9b2eff0066628ebea4889e89ed37 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | c2771d890ada902586f7cdb59c500909 |
| Supplier Device Package: | 02a5219a9cbd4da30149c71bf5423de9 |
