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See Product Specifications
| номер части: | 2N4123 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 5ecc0432168b0399ced3837f4c099c74 |
| Voltage - Collector Emitter Breakdown (Max): | 6f065265b5ad79aa8b78335bb14c6420 |
| Vce Saturation (Max) @ Ib, Ic: | 50173a6c61ac3c2c6fff1f0a4be0e5e9 |
| Current - Collector Cutoff (Max): | 290f65d0733ef781596b9c3c593f983b |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | d459df9ce1cfcbc6d0cd662e13954c7b |
| Power - Max: | 7d85d5fffbdee182074e6c279666ca07 |
| Frequency - Transition: | ed54b48b4b98a53ca5d3d8bed2512fbd |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
| Supplier Device Package: | 2f84ada388e0516613ee9bf116b4e076 |
