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See Product Specifications
| номер части: | 2N4870 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Voltage - Collector Emitter Breakdown (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 5679da647e78a1a4c1fdd8f9981e2fc1 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | df0cfb73282f38fbf83a5c7db56c6778 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
| Supplier Device Package: | 2f84ada388e0516613ee9bf116b4e076 |
