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See Product Specifications
| номер части: | 2N4912 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 84ca31d47822b436e7a9e53e2a08b38a |
| Voltage - Collector Emitter Breakdown (Max): | ebd7aaeec2792ddf9fe1af48370ec717 |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | d68990b126a93023394a05f1f1ce60e4 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | c2771d890ada902586f7cdb59c500909 |
| Supplier Device Package: | 02a5219a9cbd4da30149c71bf5423de9 |
