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See Product Specifications
| номер части: | 2N5172 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 431e7d6cd9f66043047f49ab44061d9d |
| Voltage - Collector Emitter Breakdown (Max): | 622fb57dec9cae5648afabcd559f8856 |
| Vce Saturation (Max) @ Ib, Ic: | 260c29a9f2817a23c6c0a5d55af4e3d9 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 091f65576e57fd03450e08df580860b7 |
| Power - Max: | 8c699428d5776e26a0efa7665d6350bf |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
