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See Product Specifications
| номер части: | 2N5195 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 84ca31d47822b436e7a9e53e2a08b38a |
| Voltage - Collector Emitter Breakdown (Max): | ebd7aaeec2792ddf9fe1af48370ec717 |
| Vce Saturation (Max) @ Ib, Ic: | 89e9ad0b1e04030a3acf24a87d8cc5c5 |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5a2bf4a2b255b3090e7bcb8f5c95f989 |
| Power - Max: | 7d0a65785ac5e60ff547642ae569e0de |
| Frequency - Transition: | e21eb40a6ac6078b4254e957164cf762 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | da026cb22f7849c96782492efc78cebc |
| Supplier Device Package: | 4eef29f30e339733f1ce6bbff046ce9b |
