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See Product Specifications
| номер части: | 2N5416 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | e61c2e8e49eca0e4942ddb2b339c10b0 |
| Voltage - Collector Emitter Breakdown (Max): | 7990209dc00c5b5db65871c8bf669854 |
| Vce Saturation (Max) @ Ib, Ic: | b0863b2ed253950088d446216b6fa887 |
| Current - Collector Cutoff (Max): | 80ec519e19d3548e105ed3929eed58db |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | cc16b8f5ff65f4bfcc64fb9f970ccc7e |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | 0a58c0e754fa0a28792ede845c479a51 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 93920dff4ce3e5abb3b2aa31e508ea21 |
| Supplier Device Package: | ab7b2f6fad5c0b7d176e1264a6e6a29f |
