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See Product Specifications
| номер части: | 2N5496 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | a47719ecb32d7606a5528e41a07e5236 |
| Voltage - Collector Emitter Breakdown (Max): | 674013fab1fe246f9a68b098a8c93b47 |
| Vce Saturation (Max) @ Ib, Ic: | ef732fee4d78437cdf42e251b662401f |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 7ebd44fdd99272e52854780fb6476f8f |
| Power - Max: | 7d0a65785ac5e60ff547642ae569e0de |
| Frequency - Transition: | 550516a79299d4aa4cb3d6655c89c3a8 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
