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See Product Specifications
| номер части: | 2N5550 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | c3f1a9023ba907caf775afe2bcdbfc21 |
| Voltage - Collector Emitter Breakdown (Max): | 6f7ce75df69c251c115e97dd1e21e497 |
| Vce Saturation (Max) @ Ib, Ic: | 931758ac53f6177f4ca07884ffbf87f3 |
| Current - Collector Cutoff (Max): | deeb8c7cafdc46f12ef41020ec559854 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5c17947187cad272059d4cc80ab16090 |
| Power - Max: | 8c699428d5776e26a0efa7665d6350bf |
| Frequency - Transition: | e44bd8212f6498a93630f3b4e927a576 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | 395bfae68d45c085ed421651828bcabf |
