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See Product Specifications
| номер части: | 2N5551 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 5ecc0432168b0399ced3837f4c099c74 |
| Voltage - Collector Emitter Breakdown (Max): | fbaf3c72fa8f43a3cedb18069593088d |
| Vce Saturation (Max) @ Ib, Ic: | bc238bed534454eae83abc6098b604d7 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a23a0d1fb6398094cbadf4b8b7721c5f |
| Power - Max: | 8c699428d5776e26a0efa7665d6350bf |
| Frequency - Transition: | e44bd8212f6498a93630f3b4e927a576 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 2f84ada388e0516613ee9bf116b4e076 |
