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See Product Specifications
| номер части: | 2N5882 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 192ea1990df41f495cec1f25a3ca9750 |
| Voltage - Collector Emitter Breakdown (Max): | ebd7aaeec2792ddf9fe1af48370ec717 |
| Vce Saturation (Max) @ Ib, Ic: | 52aff3be4c9447ce76e6b43610cce1f6 |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | eb6cffb8092b01341c0c22b981ebbc9f |
| Power - Max: | ea864a98bac5fe41ad704c79a98ab270 |
| Frequency - Transition: | 550516a79299d4aa4cb3d6655c89c3a8 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | d951b62dcd3ff3e2b9df0a3e52e82ddb |
